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FET Arrangement, Technologies, Benchmarks, Materials, Applications.

VLSI FET technology is taking leaps and bounds in deciding the future of embedded technology. Newest technologies based on number of gates, FET arrangement, type of materials which have been presented lately are analyzed and its beneficiaries and deficiencies are pointed out. These new categories of materials include transistors manufactured from Silicon (Si), Germanium (Ge), Gallium Arsenide (GaAs), and Indium Gallium Arsenide (InGaAs), organic materials. Various considerations are shortlisted before deciding the ideal FET technology and the benchmarks. These benchmarks describe the properties and parameters which are necessary for deciding the FET technology. Palpable factors include availability of material, switching speed, ease of manufacturing, power dissipation, hardware complexity, thickness, band gap, threshold voltage, mobility of charge carriers, efficiency, scaling factors, etc. Detailed discoveries of the specifications are stated including summaries, graphical comparisons and suggestions of the type of hardware which is judicious are discussed. Such a technology will be useful for embedded processors and sensors. When manufactured, it will be a beneficial hardware for deep learning and machine learning algorithms and its application.