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FETs as a Congruous Hardware in Embedded Technology and Sensors
Upamanyu Sinha, Swapna Maku, Rajab Challoo
Pages - 48 - 65     |    Revised - 31-05-2021     |    Published - 30-06-2021
Volume - 13   Issue - 2    |    Publication Date - June 2021  Table of Contents
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KEYWORDS
FET Arrangement, Technologies, Benchmarks, Materials, Applications.
ABSTRACT
VLSI FET technology is taking leaps and bounds in deciding the future of embedded technology. Newest technologies based on number of gates, FET arrangement, type of materials which have been presented lately are analyzed and its beneficiaries and deficiencies are pointed out. These new categories of materials include transistors manufactured from Silicon (Si), Germanium (Ge), Gallium Arsenide (GaAs), and Indium Gallium Arsenide (InGaAs), organic materials. Various considerations are shortlisted before deciding the ideal FET technology and the benchmarks. These benchmarks describe the properties and parameters which are necessary for deciding the FET technology. Palpable factors include availability of material, switching speed, ease of manufacturing, power dissipation, hardware complexity, thickness, band gap, threshold voltage, mobility of charge carriers, efficiency, scaling factors, etc. Detailed discoveries of the specifications are stated including summaries, graphical comparisons and suggestions of the type of hardware which is judicious are discussed. Such a technology will be useful for embedded processors and sensors. When manufactured, it will be a beneficial hardware for deep learning and machine learning algorithms and its application.
1 refSeek 
2 Doc Player 
3 J-Gate 
4 Scribd 
5 SlideShare 
A. A. Bait, “SHORT CHANNEL EFFECTS” Internet: https://www.slideshare.net/ashishbait/. [April 20, 2021].
A. Shah, “Intel to bring 3D transistors to next-generation chips” Internet: https://www.macworld.com/article/212108/intel3d.html. May 4, 2011 [April 21, 2021].
C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M.C. Holland, M.L. Huang, C. H. Lin, C. H. Hsieh, Y.S. Chang, T. L. Lee, Y.Y. Chen, P. Ramvall, E .Lind, W. C. Hsu, L-E. Wernersson, R. Droopad, M. Droopad and C. H. Diaz, “High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations” in AIP Advances, 2014.
D. K. Sadana , S.W. Bedell , J. P. de Souza , Y. Sun E. Kiewra , A. Reznicek , T. Adams, K. Fogel , G.G. Shahidi1 C. Marchiori D.J. Webb, M. Richter , C. Gerl , M. Sousa , J. Fompeyrine , R. Germann, “ CMOS Scaling beyond 22nm Node” in ECS transaction, 2009, pp.267-274.
J. Xu. “A Performance Comparison of GAN E-HEMTs versus SiC MOSFETS in Power Switching Applications”. Internet: https://eepower.com/technical-articles/a-performance-comparison-of-gan-e-hemts-versus-sic-mosfets-in-power-switching-applications/#, June 09, 2007 [ June 6, 2021].
K. Garg and D. Kapoor, “Single Gate Devices to Multigate Devices,” in International Journal of Innovations in Engineering and Management, Vol. 4; No. 1: ISSN: 2319-3344 (Jan-June 2015).
Peide D. Ye, “Germanium Can Take Transistors Where Silicon Can’t,” in 2016 IEEE Spectrum, Nov 2016.
R. Kleim, “Exploring the Pros and Cons of Silicon Carbide (SiC) FETs: A New MOSFET from Cree” Internet: https://www.allaboutcircuits.com/technical-articles/pros-cons-silicon-carbide-sic-fets-c3m0075120K-MOSFET-Cree/, March 2017 [April 21, 2021].
R. Mertens, “Oxygen adsorption in graphene can be controlled using a field-effect transistor” Internet:https://www.graphene-info.com/oxygen-adsorption-graphene-can-be-controlled-using-field-effect-transistor. August 2011 [April 20, 2021].
R. Moos, K. Sahner, M. Fleischer, U. Guth, N. Barsan and U. Weimar, “Solid State Gas Sensor Research in Germany- a Status Report” Internet: https: www.ncbi.nlm.nih.gov/pmc/articles/PMC3291914/ June 2009. ISSN 1424-8220.
Robert Pierret, “Advanced Semiconductor Fundamentals,” August 2002, 2nd Edition, ISBN-13: 978-0130617927.
S. Datta,”Recent Advances in High Performance CMOS Transistors: From Planar to Non-Planar” retrieved from The Electrochemical Society Interface, Spring 2013.
S. Vidya, A. R. Khan, Sandhya V. Kamat and V. Venkritesh, “3D FinFET for next generation Nano Devices,” in 2018 International Conference on Current Trends towards Converging Technologies (ICCTCT), March 2018.
Santosh Kumar Gupta, Gaurab G. Pathak, Debajit Das and Chandan Sharma, “Double Gate MOSFET and its application for efficient digital circuits” in 2011 3rd International Conference on Electronics Computer Technology, Volume:2 pp36-39.
Mr. Upamanyu Sinha
3411 Oak Grove Ave, Apt-605, Dallas, TX-75204 - United States of America
Miss Swapna Maku
224 Red Bud Pass, Wylie, TX 75098 - United States of America
Professor Rajab Challoo
EECS Department, MSC 192, Texas A&M University-Kingsville, Kingsville, TX 75363-8202 - United States of America
r-challoo@tamuk.edu